N-Channel Power MOSFET, 500V Vds, 64A Continuous Drain Current (ID). Features 85mΩ maximum drain-source on-resistance (Rds On) and 830W maximum power dissipation. Operates from -55°C to 150°C with a 30V gate-source voltage (Vgs). This silicon Metal-oxide Semiconductor FET is housed in a TO-247-3 plastic package for through-hole mounting. Includes 22ns fall time and 85ns turn-off delay time.
PackageTO-247-3
Current Rating64A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFX64N50P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 85MR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX64N50P Datasheet
Download the complete datasheet for Ixys IXFX64N50P to view detailed technical specifications.
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