N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 64A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 96mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, it supports a maximum power dissipation of 1.04kW and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 12nF input capacitance and a 30V gate-to-source voltage rating.
PackageTO-247-3
Current Rating64A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFX64N60P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 96mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 96MR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 96mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 79ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX64N60P Datasheet
Download the complete datasheet for Ixys IXFX64N60P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
