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Technical Specifications
Ixys IXFX66N50Q2 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 66A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 9.125nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX66N50Q2 Datasheet
Download the complete datasheet for Ixys IXFX66N50Q2 to view detailed technical specifications.
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