Ixys
IXFX78N50P3
Power Field-Effect Transistor, 78A I(D), 500V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.13kW
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Technical Specifications
Ixys IXFX78N50P3 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
78A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
68mR
Drain to Source Voltage (Vdss)
500V
Fall Time
7ns
Gate to Source Voltage (Vgs)
30V
Height
21.34mm
Input Capacitance
9.9nF
Length
16.13mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.13kW
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.13kW
Rds On Max
68mR
RoHS Compliant
Yes
Series
HiPerFET™, Polar3™
Turn-Off Delay Time
60ns
Turn-On Delay Time
30ns
Width
5.21mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFX78N50P3 Datasheet
Download the complete datasheet for Ixys IXFX78N50P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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