Power Field-Effect Transistor, 78A I(D), 500V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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Ixys IXFX78N50P3 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 78A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 68mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 9.9nF |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.13kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13kW |
| Rds On Max | 68mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
| Width | 5.21mm |
| RoHS | Compliant |
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