N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 80A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 65mΩ drain-source on-resistance and a maximum power dissipation of 1.04kW. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key electrical characteristics include 12.7nF input capacitance and fast switching times with a 16ns fall time and 70ns turn-off delay.
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Ixys IXFX80N50P technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 65MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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