N-Channel Power MOSFET, 500V Drain-Source Voltage, 80A Continuous Drain Current, and 65mΩ Max Drain-Source On-Resistance. Features a 1.25kW Max Power Dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-247-3 package with through-hole mounting. Includes 30ns turn-on and 43ns turn-off delay times, with 10nF input capacitance. RoHS compliant and lead-free.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.25kW
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Technical Specifications
Ixys IXFX80N50Q3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 65MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 10nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25kW |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 30ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX80N50Q3 Datasheet
Download the complete datasheet for Ixys IXFX80N50Q3 to view detailed technical specifications.
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