N-Channel Power MOSFET, 300V Vds, 90A Continuous Drain Current. Features 33mΩ maximum drain-source on-resistance and 560W maximum power dissipation. Designed for through-hole mounting in a TO-247-3 package. Includes 40ns fall time and 100ns turn-off delay time. Operates from -55°C to 150°C.
PackageTO-247-3
Current Rating90A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFX90N30 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 33MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX90N30 Datasheet
Download the complete datasheet for Ixys IXFX90N30 to view detailed technical specifications.
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