The IXFX94N50P2 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 94A and a drain to source breakdown voltage of 500V. The device is packaged in a TO-247-3 plastic package and is RoHS compliant. It is suitable for high-power applications and can dissipate up to 1.3kW of power.
Sign in to ask questions about the Ixys IXFX94N50P2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXFX94N50P2 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 94A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3kW |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | PolarP2™ HiPerFET™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFX94N50P2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
