The IXGA20N120A3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It has a maximum power dissipation of 180W and is packaged in a TO-263-3 surface mount package. The device is RoHS compliant and has a maximum operating temperature of 150°C, with a minimum operating temperature of -55°C. It is available in a package quantity of 50, packaged in a rail/tube format.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA20N120A3 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA20N120A3 Datasheet
Download the complete datasheet for Ixys IXGA20N120A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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