
The IXGA30N120B3 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 60A and a maximum power dissipation of 300W. It is packaged in a TO-263 plastic package with three pins. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is not SVHC compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXGA30N120B3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-263 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.96V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.5V |
| Input Type | STANDARD |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGA30N120B3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
