The IXGA48N60A3 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 120A and a maximum power dissipation of 300W. It is packaged in a TO-263-3 surface mount package and is lead-free and RoHS compliant. The IGBT is suitable for high-power applications and is part of the GenX3 series from Ixys.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA48N60A3 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.35V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 120A |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA48N60A3 Datasheet
Download the complete datasheet for Ixys IXGA48N60A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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