The IXGA8N100 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1kV and a maximum collector current of 16A. It has a maximum power dissipation of 54W and is packaged in a TO-263-3 case for surface mount applications. The transistor operates over a temperature range of -55°C to 150°C and is compliant with lead-free standards. It has a turn-on delay time of 15ns and a turn-off delay time of 600ns.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA8N100 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGA8N100 |
| Turn-Off Delay Time | 600ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA8N100 Datasheet
Download the complete datasheet for Ixys IXGA8N100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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