N-channel Insulated Gate Bipolar Transistor (IGBT) chip for high-voltage applications. Features a 1.7kV Collector-Emitter Breakdown Voltage and a maximum Collector Current of 32A. Offers a low Collector-Emitter Saturation Voltage of 2.7V and a maximum power dissipation of 190W. Packaged in a TO-247-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-247-3
MountingThrough Hole
Power190W
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Technical Specifications
Ixys IXGH16N170 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 3.5V |
| Height | 21.46mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 32A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 45ns |
| Weight | 0.229281oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH16N170 Datasheet
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