The IXGH20N140C3H1 is an insulated gate bipolar transistor from Ixys, packaged in a TO-247-3 through-hole package. It has a collector-emitter breakdown voltage of 1.4kV and a maximum collector current of 42A. The device can handle a maximum power dissipation of 250W and operates within a temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageTO-247-3
MountingThrough Hole
Power250W
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Technical Specifications
Ixys IXGH20N140C3H1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.4kV |
| Collector Emitter Saturation Voltage | 4V |
| Collector-emitter Voltage-Max | 5V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 250W |
| Reverse Recovery Time | 70ns |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH20N140C3H1 Datasheet
Download the complete datasheet for Ixys IXGH20N140C3H1 to view detailed technical specifications.
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