The IXGH25N100AU1 is a high-power insulated gate bipolar transistor from Ixys. It features a collector-emitter breakdown voltage of 1kV and a maximum collector current of 50A. The device is packaged in a TO-247-3 case and is designed for through-hole mounting. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH25N100AU1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector-emitter Voltage-Max | 4V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH25N100AU1 Datasheet
Download the complete datasheet for Ixys IXGH25N100AU1 to view detailed technical specifications.
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