The IXGH25N100U1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1kV and a maximum collector current of 50A. It has a maximum power dissipation of 200W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-247-3 package and is mounted through a hole. It is RoHS compliant and available in quantities of 30 per rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH25N100U1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector-emitter Voltage-Max | 3.5V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH25N100U1 Datasheet
Download the complete datasheet for Ixys IXGH25N100U1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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