Ixys
IXGH25N250
Insulated Gate Bipolar Transistor, 60A I(C), 2500V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3
PackageTO-247
MountingThrough Hole
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Technical Specifications
Ixys IXGH25N250 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Collector-emitter Voltage-Max | 5.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH25N250 Datasheet
Download the complete datasheet for Ixys IXGH25N250 to view detailed technical specifications.
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