The IXGH28N90B is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 900V and a maximum collector current of 51A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and is available in a quantity of 30 per rail/tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH28N90B technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 900V |
| Collector Emitter Voltage (VCEO) | 900V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 51A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH28N90B Datasheet
Download the complete datasheet for Ixys IXGH28N90B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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