Ixys
IXGH30N120B3D1
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
MountingThrough Hole
Power300W
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Technical Specifications
Ixys IXGH30N120B3D1 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.96V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.5V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
150A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
300W
Reverse Recovery Time
100ns
RoHS Compliant
Yes
Series
GenX3™
Weight
0.229281oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGH30N120B3D1 Datasheet
Download the complete datasheet for Ixys IXGH30N120B3D1 to view detailed technical specifications.
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