The IXGH30N60C3D1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 60A and a maximum power dissipation of 220W. It is packaged in a TO-247-3 case and is designed for through hole mounting. The device is RoHS compliant and has a maximum operating temperature of 150°C, with a minimum operating temperature of -55°C. It features a reverse recovery time of 25ns and is part of the GenX3 series.
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Ixys IXGH30N60C3D1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3V |
| Input Capacitance | 915pF |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 220W |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| RoHS | Compliant |
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