The IXGH32N120A3 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 75A and a maximum power dissipation of 300W. It is packaged in a TO-247-3 plastic package and is designed for through hole mounting. The operating temperature range is -55°C to 150°C. The device is RoHS compliant and lead free.
Sign in to ask questions about the Ixys IXGH32N120A3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXGH32N120A3 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.35V |
| Input Capacitance | 2.15nF |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Weight | 0.229281oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGH32N120A3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
