The IXGH32N120A3 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 75A and a maximum power dissipation of 300W. It is packaged in a TO-247-3 plastic package and is designed for through hole mounting. The operating temperature range is -55°C to 150°C. The device is RoHS compliant and lead free.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH32N120A3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.35V |
| Input Capacitance | 2.15nF |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH32N120A3 Datasheet
Download the complete datasheet for Ixys IXGH32N120A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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