The IXGH32N60AU1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 60A and a maximum power dissipation of 200W. It is packaged in a TO-247-3 flange mount package and is suitable for high-power applications. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is lead-free and RoHS compliant, making it suitable for use in a wide range of industrial and commercial applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXGH32N60AU1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXGH32N60AU1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.9V |
| Current Rating | 60A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGH32N60AU1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
