Ixys
IXGH32N60BU1
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
PackageTO-247AD
Current Rating60A
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXGH32N60BU1 technical specifications.
General
Package/Case
TO-247AD
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.3V
Current Rating
60A
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
60A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
30
Packaging
Bulk
Radiation Hardening
No
Reverse Recovery Time
50ns
RoHS Compliant
Yes
Series
HiPerFAST™
Turn-Off Delay Time
100ns
Turn-On Delay Time
25ns
DC Rated Voltage
600V
Weight
0.229281oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGH32N60BU1 Datasheet
Download the complete datasheet for Ixys IXGH32N60BU1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
