The IXGH40N60B2D1 is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. It has a maximum power dissipation of 300W and is packaged in a TO-247-3 flange mount. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS standards. It is available in a rail/tube packaging with 30 units per package.
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Ixys IXGH40N60B2D1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.229281oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGH40N60B2D1 to view detailed technical specifications.
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