The IXGH60N60C2 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It features a TO-247-3 package and is designed for flange mount applications. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 480W. The IXGH60N60C2 is lead-free and RoHS compliant, making it suitable for a variety of industrial and commercial applications.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH60N60C2 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH60N60C2 Datasheet
Download the complete datasheet for Ixys IXGH60N60C2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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