The IXGK50N60BU1 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It features a TO-264-3 package and is designed for through hole mounting. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300W. The IXGK50N60BU1 is compliant with RoHS regulations and is available in a package quantity of 25 units per rail/tube.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXGK50N60BU1 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.35274oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK50N60BU1 Datasheet
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