
N-channel IGBT power module featuring 600V collector-emitter breakdown voltage and a maximum collector current of 300A. This module offers a low collector-emitter saturation voltage of 1.35V and a maximum power dissipation of 830W. Designed for chassis mounting within a SOT-227-4 package, it operates across a temperature range of -55°C to 150°C. The module exhibits a turn-on delay time of 44ns and a turn-off delay time of 310ns, with an input capacitance of 26nF. It is lead-free and RoHS compliant.
Ixys IXGN200N60B3 technical specifications.
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Input | Standard |
| Input Capacitance | 26nF |
| Lead Free | Lead Free |
| Max Collector Current | 300A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Power Dissipation | 830W |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Turn-Off Delay Time | 310ns |
| Turn-On Delay Time | 44ns |
| Weight | 1.340411oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGN200N60B3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
