N-channel IGBT power module featuring 600V collector-emitter breakdown voltage and a maximum collector current of 300A. This module offers a low collector-emitter saturation voltage of 1.35V and a maximum power dissipation of 830W. Designed for chassis mounting within a SOT-227-4 package, it operates across a temperature range of -55°C to 150°C. The module exhibits a turn-on delay time of 44ns and a turn-off delay time of 310ns, with an input capacitance of 26nF. It is lead-free and RoHS compliant.
Sign in to ask questions about the Ixys IXGN200N60B3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXGN200N60B3 technical specifications.
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Input | Standard |
| Input Capacitance | 26nF |
| Lead Free | Lead Free |
| Max Collector Current | 300A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Power Dissipation | 830W |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Turn-Off Delay Time | 310ns |
| Turn-On Delay Time | 44ns |
| Weight | 1.340411oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGN200N60B3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
