N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage (V(BR)CES) and a continuous collector current of 75A, with a maximum collector current of 100A. Offers a low Collector-Emitter Saturation Voltage of 2.5V and a maximum power dissipation of 480W. Packaged in a SOT-227-4 MINIBLOC-4 for chassis mounting, this RoHS compliant component operates from -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 18ns and turn-off delay of 95ns.
PackageSOT-227-4
MountingChassis Mount, Screw
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Technical Specifications
Ixys IXGN60N60C2D1 technical specifications.
General
Package/Case
SOT-227-4
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
75A
Height
9.6mm
Input
Standard
Input Capacitance
4.75nF
Lead Free
Lead Free
Length
38.2mm
Max Collector Current
100A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
480W
Mount
Chassis Mount, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
HiPerFAST™
Turn-Off Delay Time
95ns
Turn-On Delay Time
18ns
Weight
1.340411oz
Width
25.07mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXGN60N60C2D1 Datasheet
Download the complete datasheet for Ixys IXGN60N60C2D1 to view detailed technical specifications.
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