N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage (V(BR)CES) and a continuous collector current of 75A, with a maximum collector current of 100A. Offers a low Collector-Emitter Saturation Voltage of 2.5V and a maximum power dissipation of 480W. Packaged in a SOT-227-4 MINIBLOC-4 for chassis mounting, this RoHS compliant component operates from -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 18ns and turn-off delay of 95ns.
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Ixys IXGN60N60C2D1 technical specifications.
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 75A |
| Height | 9.6mm |
| Input | Standard |
| Input Capacitance | 4.75nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 18ns |
| Weight | 1.340411oz |
| Width | 25.07mm |
| RoHS | Compliant |
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