The IXGP30N60B4D1 is a 600V insulated gate bipolar transistor with a maximum collector current of 56A. It features a TO-220-3 package and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. The IXGP30N60B4D1 has a maximum power dissipation of 190W and a reverse recovery time of 30ns.
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXGP30N60B4D1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXGP30N60B4D1 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.7V |
| Input Type | STANDARD |
| Max Collector Current | 56A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP30N60B4D1 Datasheet
Download the complete datasheet for Ixys IXGP30N60B4D1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.