Ixys
IXGP30N60B4D1
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP30N60B4D1 technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector-emitter Voltage-Max
1.7V
Input Type
STANDARD
Max Collector Current
56A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Reverse Recovery Time
30ns
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys IXGP30N60B4D1 Datasheet
Download the complete datasheet for Ixys IXGP30N60B4D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.