The Ixys IXGP48N60C3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. It has a maximum power dissipation of 300W and operates over a temperature range of -55°C to 150°C. The device is packaged in a TO-220-3 package and is mounted through a hole. It is lead-free and RoHS compliant.
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Ixys IXGP48N60C3 technical specifications.
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGP48N60C3 to view detailed technical specifications.
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