The IXGR24N60CD1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 42A. It has a maximum power dissipation of 80W and operates within a temperature range of -55°C to 150°C. The device is packaged in a through-hole configuration and is compliant with RoHS regulations.
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Ixys IXGR24N60CD1 technical specifications.
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGR24N60CD1 to view detailed technical specifications.
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