The IXGR32N170H1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 38A. It is packaged in a TO-247AD flange mount and is suitable for operation over a temperature range of -55°C to 150°C. The device is RoHS compliant and has a maximum power dissipation of 200W.
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Ixys IXGR32N170H1 technical specifications.
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 3.5V |
| Input Type | STANDARD |
| Max Collector Current | 38A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 230ns |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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