Ixys
IXGR32N60C
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
MountingThrough Hole
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Technical Specifications
Ixys IXGR32N60C technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
45A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
HiPerFAST™, Lightspeed™
Turn-Off Delay Time
85ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXGR32N60C Datasheet
Download the complete datasheet for Ixys IXGR32N60C to view detailed technical specifications.
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