The IXGR35N120B is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 70A. It has a maximum power dissipation of 200W and is packaged in a TO-247AD package. The device is RoHS compliant and has an operating temperature range of -55°C to 150°C.
PackageTO-247AD
MountingThrough Hole
Power200W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXGR35N120B datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXGR35N120B technical specifications.
General
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.3V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGR35N120B Datasheet
Download the complete datasheet for Ixys IXGR35N120B to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
