The IXGR40N60BD1 is a 600V insulated gate bipolar transistor with a maximum collector current of 70A. It features a HiPerFAST series design and is packaged in an in-line, R-PSIP-T3 package type. The device is RoHS compliant and suitable for operation over a temperature range of -40°C to 150°C. The IXGR40N60BD1 is available in quantities of 30, packaged in rail or tube packaging.
MountingThrough Hole
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Technical Specifications
Ixys IXGR40N60BD1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGR40N60BD1 Datasheet
Download the complete datasheet for Ixys IXGR40N60BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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