The IXGT15N120C is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 30A. It is packaged in a TO-268-3 case and is designed for surface mount applications. The device can operate at temperatures ranging from -55°C to 150°C and has a maximum power dissipation of 150W. The IXGT15N120C is not RoHS compliant.
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| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.8V |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| RoHS Compliant | No |
| Series | Lightspeed™ |
| RoHS | Not Compliant |
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