The IXGT15N120CD1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 30A. It has a maximum power dissipation of 150W and operates over a temperature range of -55°C to 150°C. The device is packaged in a TO-268-3 surface mount package and is available in quantities of 30 per rail/Tube. Note that this device is not RoHS compliant.
PackageTO-268-3
MountingSurface Mount
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXGT15N120CD1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXGT15N120CD1 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.8V |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | No |
| Series | IXGT15N120 |
| Weight | 0.158733oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Ixys IXGT15N120CD1 Datasheet
Download the complete datasheet for Ixys IXGT15N120CD1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
