The IXGT16N170A is a high-power insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 16A. It features a surface mount package type TO-268-3 and operates within a temperature range of -55°C to 150°C. The device is RoHS compliant and has a maximum power dissipation of 190W.
PackageTO-268-3
MountingSurface Mount
Power190W
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Technical Specifications
Ixys IXGT16N170A technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 4.2V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 5V |
| Input Type | STANDARD |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 190W |
| Reverse Recovery Time | 230ns |
| RoHS Compliant | Yes |
| Series | IXGT16N170 |
| Weight | 0.158733oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT16N170A Datasheet
Download the complete datasheet for Ixys IXGT16N170A to view detailed technical specifications.
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