The IXGT16N170AH1 is a high-power insulated gate bipolar transistor from Ixys, featuring a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 16A. It has a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. The device is packaged in a TO-268-3 case and is mounted on the surface. It is compliant with RoHS regulations.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT16N170AH1 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 5V |
| Input Type | STANDARD |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Bulk |
| Reverse Recovery Time | 230ns |
| RoHS Compliant | Yes |
| Weight | 0.158733oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT16N170AH1 Datasheet
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