The IXGT24N60CD1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 48A. It is packaged in a TO-268-3 surface mount package and has a maximum operating temperature of 150°C. The device is RoHS compliant and suitable for use in high-power applications. The IGBT has a reverse recovery time of 25ns and a maximum power dissipation of 150W. It is available in a packaging quantity of 30 devices per rail or tube.
Checking distributor stock and pricing after the page loads.
Ixys IXGT24N60CD1 technical specifications.
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 48A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™, Lightspeed™ |
| Weight | 0.158733oz |
| RoHS | Compliant |
