The IXGT25N160 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.6kV and a maximum collector current of 75A. It is packaged in a TO-268-3 case and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. With a maximum power dissipation of 300W, this IGBT is designed for high-power applications.
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Ixys IXGT25N160 technical specifications.
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.6kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 1.6kV |
| Collector-emitter Voltage-Max | 4.7V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGT25N160 |
| Weight | 0.158733oz |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGT25N160 to view detailed technical specifications.
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