The IXGT30N120B3D1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum power dissipation of 300W and is packaged in a TO-268 package. The transistor is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
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| Package/Case | TO-268 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.5V |
| Height | 5.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.05mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 100ns |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Weight | 0.158733oz |
| Width | 14mm |
| RoHS | Compliant |
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