IXGT32N170

Datasheet

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, TO-268, PLASTIC PACKAGE-3

Ixys

IXGT32N170

Name: IXGT32N170 Ixys
Brand: Ixys
SKU: IXGT32N170
Price: 28.43 USD
Availability: OutOfStock

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, TO-268, PLASTIC PACKAGE-3

PackageTO-268

MountingSurface Mount

Power350W

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Pricing & Availability

Distributor	Package Type	Min Qty	1+	10+	30+	Stock	Action
TME	pcs	1	28.43	22.79	18.52	-	View

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Technical Specifications

Ixys IXGT32N170 technical specifications.

General

Package/Case	TO-268
Collector Emitter Breakdown Voltage	1.7kV
Collector Emitter Saturation Voltage	2.5V
Collector Emitter Voltage (VCEO)	1.7kV
Collector-emitter Voltage-Max	3.3V
Input Type	STANDARD
Max Collector Current	75A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	350W
Mount	Surface Mount
Package Quantity	30
Packaging	Rail/Tube
Power Dissipation	350W
Radiation Hardening	No
RoHS Compliant	Yes
Series	IXGT32N170
Weight	0.158733oz