The IXGT40N60B2D1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. It is packaged in a TO-268-3 surface mount package and has a maximum operating temperature range of -55°C to 150°C. The transistor is RoHS compliant and features a reverse recovery time of 25ns. It is part of the HiPerFAST series from Ixys.
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Ixys IXGT40N60B2D1 technical specifications.
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.7V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.158733oz |
| RoHS | Compliant |
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