Ixys
IXGX120N60B
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN
PackageTO-247-3
Current Rating200A
MountingThrough Hole
Power660W
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Technical Specifications
Ixys IXGX120N60B technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.1V
Current Rating
200A
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
200A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
660W
Mount
Through Hole
Package Quantity
30
Packaging
Bulk
Power Dissipation
660W
RoHS Compliant
Yes
Series
HiPerFAST™
Turn-Off Delay Time
200ns
Turn-On Delay Time
60ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXGX120N60B Datasheet
Download the complete datasheet for Ixys IXGX120N60B to view detailed technical specifications.
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