The Ixys IXGX120N60B is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 200A. It has a maximum power dissipation of 660W and is packaged in a TO-247-3 case with through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS standards.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 200A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Power Dissipation | 660W |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 60ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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