
The IXGX120N60B3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 280A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 780W. The device is packaged in a TO-247-3 case and is lead free. It is compliant with RoHS regulations and is part of the GenX3 series.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXGX120N60B3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 280A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 780W |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGX120N60B3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
