The IXSA15N120B is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 30A. It has a maximum power dissipation of 150W and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a D2PAK-3 package and is RoHS compliant. It is suitable for use in high-power applications.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXSA15N120B technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.4V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3.4V |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSA15N120B Datasheet
Download the complete datasheet for Ixys IXSA15N120B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.