The IXSK40N60BD1 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It is packaged in a TO-264-3 flange mount and is designed for high-power applications. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 280W. The IXSK40N60BD1 is RoHS compliant and available in quantities of 25 in rail/Tube packaging.
Ixys IXSK40N60BD1 technical specifications.
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Weight | 0.35274oz |
| RoHS | Compliant |
No datasheet is available for this part.
