The Ixys IXSR40N60CD1 is a 600V insulated gate bipolar transistor with a maximum collector current of 62A. It features a reverse recovery time of 35ns and a maximum power dissipation of 210W. The transistor is available in a 3-pin package and is packaged in a rail or tube for through-hole mounting. Operating temperatures range from -55°C to 150°C. The IXSR40N60CD1 is compliant with RoHS regulations.
MountingThrough Hole
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Technical Specifications
Ixys IXSR40N60CD1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 62A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Weight | 0.186952oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSR40N60CD1 Datasheet
Download the complete datasheet for Ixys IXSR40N60CD1 to view detailed technical specifications.
No datasheet is available for this part.