N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 48A continuous collector current. Features a low 2.5V Collector-Emitter Saturation Voltage and 250W maximum power dissipation. Packaged in a TO-268 surface-mount case, this RoHS compliant component offers fast switching speeds with 30ns turn-on and turn-off delay times. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-268
Current Rating48A
MountingSurface Mount
Power250W
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Technical Specifications
Ixys IXST30N60B2D1 technical specifications.
General
Package/Case
TO-268
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
48A
Height
5.1mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.05mm
Max Collector Current
48A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Surface Mount
Package Quantity
30
Packaging
Bulk
Power Dissipation
250W
Reverse Recovery Time
30ns
RoHS Compliant
Yes
Turn-Off Delay Time
130ns
Turn-On Delay Time
30ns
DC Rated Voltage
600V
Weight
0.158733oz
Width
14mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXST30N60B2D1 Datasheet
Download the complete datasheet for Ixys IXST30N60B2D1 to view detailed technical specifications.
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