N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 48A continuous collector current. Features a low 2.5V Collector-Emitter Saturation Voltage and 250W maximum power dissipation. Packaged in a TO-268 surface-mount case, this RoHS compliant component offers fast switching speeds with 30ns turn-on and turn-off delay times. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-268
Current Rating48A
MountingSurface Mount
Power250W
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Technical Specifications
Ixys IXST30N60B2D1 technical specifications.
General
| Package/Case | TO-268 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 48A |
| Height | 5.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.05mm |
| Max Collector Current | 48A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Bulk |
| Power Dissipation | 250W |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Weight | 0.158733oz |
| Width | 14mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXST30N60B2D1 Datasheet
Download the complete datasheet for Ixys IXST30N60B2D1 to view detailed technical specifications.
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